Datasheet Details
| Part number | 2SD313 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 209.82 KB |
| Description | NPN Transistor |
| Datasheet |
 2SD313-INCHANGE.pdf
|
| Part number | 2SD313 |
|---|---|
| Manufacturer | INCHANGE |
| File Size | 209.82 KB |
| Description | NPN Transistor |
| Datasheet |
2SD313-INCHANGE.pdf
|
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max) @IC= 2.0A Complement to Type 2SB507 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for the output stage of 15W to 25W AF power amplifier.ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitte
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