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2SD317 - NPN Transistor

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.0A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in general purpose power amplifier

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD317 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 1.2V(Max) @IC= 3.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage 60 V 60 V 8 V IC Collector Current-Continuous 3.0 A ICM Collector Current-Peak Collector Power Dissipation PC @ Ta=25℃ Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 5.0 A 1.
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