2SD1918 - Silicon NPN Power Transistor

Inchange Semiconductor

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Datasheet Details

Part number	2SD1918
Manufacturer	Inchange Semiconductor
File Size	189.98 KB
Description	Silicon NPN Power Transistor
Datasheet	2SD1918-InchangeSemiconductor.pdf

2SD1918 Product details

Description

High fT：fT=80MHz(TYP) High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min) Excellent linearity of hFE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Curren

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Published: Nov 9, 2016 |