Datasheet4U Logo Datasheet4U.com

2SD1932 - Power Transistor

📥 Download Datasheet

Preview of 2SD1932 PDF
datasheet Preview Page 2

2SD1932 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) High DC Current Gain- : hFE= 1000(Min)@ (VCE= 3V, IC= 2A) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifier applications.

📁 2SD1932 Similar Datasheet

  • 2SD1933 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SD1934 - Silicon NPN epitaxial planer type Transistor (Panasonic Semiconductor)
  • 2SD1935 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1936 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
  • 2SD1936M - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SD1938 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SD1938F - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SD1939 - NPN SILICON DARLINGTON TRANSISTOR (NEC)
Other Datasheets by Inchange Semiconductor
  • 2SD1912 - Silicon NPN Power Transistor
  • 2SD1918 - Silicon NPN Power Transistor
  • 2SD1928 - Power Transistor
  • 2SD1980 - Silicon NPN Power Transistor
  • 2SD103 - Silicon NPN Power Transistors
  • 2SD1032 - Silicon NPN Power Transistor
Published: |