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2SD2422 - Silicon NPN Power Transistor

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Datasheet Details

Part number 2SD2422
Manufacturer Inchange Semiconductor
File Size 194.23 KB
Description Silicon NPN Power Transistor
Datasheet download datasheet 2SD2422-InchangeSemiconductor.pdf

2SD2422 Product details

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max.) @IC= 3A High DC Current Gain : hFE= 1000(Min) @ IC= 2A, VCE= 3V Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High power switching applications Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO

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