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2SD2118 - Silicon NPN Power Transistor

Description

High current capacity Small and slim package making it easy to make 2SD2118-used set smaller Low collector-to-emitter saturation voltage Fast switching speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2118 DESCRIPTION ·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Strobes,voltage regulators,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A PC Collector Power Dissipation 10 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website
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