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NCE5015S-VB
NCE5015S-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 6 V ID (A) Configuration
60 0.0048 0.006
16 Single
FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
D
G S
N-Channel MOSFET
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ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C
ID
TC = 125 °C
Continuous Source Current (Diode Conduction)
IS
Pulsed Drain Currenta
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.