• Part: NCE2025I
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 340.58 KB
Download NCE2025I Datasheet PDF
VBsemi
NCE2025I
FEATURES - Halogen-free - Trench FET® Gen III Power MOSFET - 100 % Rg Tested - 100 % UIS Tested APPLICATIONS - DC/DC Conversion - System Power Ro HS PLIANT GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Avalanche Current Avalanche Energy L = 0.1 m H Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range VDS VGS IDM IAS EAS IS TJ, Tstg Soldering Remendations (Peak Temperature) Limit ± 20 50 45 14b, c 10 b, c 150...