Datasheet4U Logo Datasheet4U.com

NCE55P05S - P-Channel 60V MOSFET

Features

  • TrenchFET® power MOSFET.
  • 100 % Rg and UIS tested www. VBsemi. com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET.

📥 Download Datasheet

Datasheet preview – NCE55P05S

Datasheet Details

Part number NCE55P05S
Manufacturer VBsemi
File Size 249.62 KB
Description P-Channel 60V MOSFET
Datasheet download datasheet NCE55P05S Datasheet
Additional preview pages of the NCE55P05S datasheet.

📁 Similar Datasheet

  • NCE55P05S - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE55P04S - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE55P15 - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE55P15K - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE55P30 - P-Channel Enhancement Mode Power MOSFET (NCE Power)
  • NCE55P30K - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE5520Q - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
  • NCE5530K - P-Channel Enhancement Mode Power MOSFET (NCE Power)
  • NCE5549 - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power)
  • NCE5558K - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
NCE55P05S-VB NCE55P05S-VB Datasheet P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.060 0.063 -8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested www.VBsemi.com SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.
Published: |