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NCE5549 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE5549 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =55V,ID =49A RDS(ON) < 15mΩ @ VGS=10V (Typ:9mΩ) Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability.

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Datasheet preview – NCE5549

Datasheet Details

Part number NCE5549
Manufacturer NCE Power
File Size 394.09 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE5549 Datasheet
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http://www.ncepower.com Pb Free Product NCE5549 NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE5549 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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