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NCE5530K - P-Channel Enhancement Mode Power MOSFET

Description

The NCE5530K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =-55V,ID =-30A RDS(ON).

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Datasheet Details

Part number NCE5530K
Manufacturer NCE Power
File Size 412.21 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE5530K Datasheet
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http://www.ncepower.com Pb Free Product NCE5530K NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE5530K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
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