NCE0157A2
FEATURES
- Super Trench technology Power MOSFET
- Excellent gate charge x Rds (on) product(FOM)
- Very low on-resfistance Rds (on)
- 100 % Rg and UIS Tested
S1 S2 S3 G4
SO-8
Top View
8D 7D 6D 5D
APPLICATIONS
- DC/DC Primary Side Switch
- Tele/Server
- Motor Drive Control
- Synchronous Rectification
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
± 20
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
13 10.2b, c
TA = 70 °C
7.4b, c A
Pulsed Drain Current (t = 300 µs)
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
7 3.1b, c
Single Pulse Avalanche...
