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NCE5558K - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE5558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =55V,ID =58A RDS(ON) < 13mΩ @ VGS=10V (Typ:10.5mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet preview – NCE5558K

Datasheet Details

Part number NCE5558K
Manufacturer NCE Power Semiconductor
File Size 386.15 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE5558K Datasheet
Additional preview pages of the NCE5558K datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE5558K NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5558K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =55V,ID =58A RDS(ON) < 13mΩ @ VGS=10V (Typ:10.
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