NCE5520Q - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =55V,ID =20A RDS(ON) < 22mΩ @ VGS=10V (Typ:19mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE5520Q
Manufacturer	NCE Power Semiconductor
File Size	281.41 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE5520Q Datasheet
Additional preview pages of the NCE5520Q datasheet.

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http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE5520Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jan 25, 2016 |