NCE55H11 Datasheet PDF (NCE N-Channel Enhancement Mode Power MOSFET)

NCE55H11 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.5mΩ) Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

Datasheet Details

Part number	NCE55H11
Manufacturer	NCE Power
File Size	453.64 KB
Description	NCE N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE55H11 Datasheet
Additional preview pages of the NCE55H11 datasheet.

📁 Similar Datasheet

NCE55H12 - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE5520Q - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE5558K - NCE N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE55P04S - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE55P05S - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE55P05S - P-Channel 60V MOSFET (VBsemi)

NCE55P15 - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE55P15K - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE55P30K - P-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

NCE5015S - N-Channel Enhancement Mode Power MOSFET (NCE Power Semiconductor)

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE55H11 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE55H11 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =55V,ID =110A RDS(ON) < 6mΩ @ VGS=10V (Typ:4.

Published: May 28, 2015 |