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PE628HT
Dual N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS Q2 30V
RDS(ON) 7.5mΩ @VGS = 10V
Q1 30V
20mΩ @VGS = 10V
ID 39A 21A
PDFN 3X3S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
Q2
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
Continuous Drain Current3 Pulsed Drain Current1
TC = 25 °C TC = 100 °C
ID IDM
39 24 50
Continuous Drain Current
TA = 25 °C TA = 70 °C
ID
14 11
Avalanche Current
IAS 22
Avalanche Energy
L = 0.1mH
EAS
24
Power Dissipation
TC = 25 °C TC = 100 °C
PD
21 8.6
Power Dissipation4
TA = 25 °C TA = 70 °C
PD
2.7 1.7
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
Q1 30 ±20 21 13 32 8 6.5 12 7.2 16 6 2.5 1.
PE628HT Datasheet
