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PE628BA
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V(BR)DSS
RDS(ON)
30V 14mΩ @VGS = 10V
ID3 27A
PDFN 3X3P
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
Drain-Source Voltage
VDS 30
Gate-Source Voltage
VGS ±20
TC = 25 °C
27
Continuous Drain Current3
TC = 100 °C TA = 25 °C
ID
17 8
Pulsed Drain Current1
TA = 70 °C
IDM
6 66
Avalanche Current
IAS 14.7
Avalanche Energy
L =0.1mH
EAS
10.8
TC = 25 °C
18
Power Dissipation
TC = 100 °C TA = 25 °C
PD
7 1.7
TA = 70 °C
1.1
Operating Junction & Storage Temperature Range
TJ, Tstg
-55 to 150
UNITS V
A
mJ W °C
REV 1.
PE628BA Datasheet
