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SVGP20500NL5 - 200V N-CHANNEL MOSFET

Download the SVGP20500NL5 datasheet PDF. This datasheet also covers the SVGP20500NL5-SilanMicroelectronics variant, as both devices belong to the same 200v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

SVGP20500NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 24A, 200V, RDS(on)(typ. )=42m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant PDFN-8-5X6X0.95-1.27 KEY.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVGP20500NL5-SilanMicroelectronics_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVGP20500NL5
Manufacturer Silan Microelectronics
File Size 392.82 KB
Description 200V N-CHANNEL MOSFET
Datasheet download datasheet SVGP20500NL5 Datasheet

Other Datasheets by Silan Microelectronics

Part Number Description
SVGP20110NP7 200V N-CHANNEL MOSFET
SVGP20110NS 200V N-CHANNEL MOSFET
SVGP20110NT 200V N-CHANNEL MOSFET
SVGP02R58NL5 25V N-CHANNEL MOSFET
SVGP03100NCS 28V N-CHANNEL MOSFET
SVGP066R1NL5 60V N-CHANNEL MOSFET
SVGP069R5NSA 60V N-CHANNEL MOSFET
SVGP082R6NL5A 80V N-CHANNEL MOSFET
SVGP101R5NL 100V N-CHANNEL MOSFET
SVGP103R0NP7 100V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVGP20500NL5_Datasheet 24A, 200V N-CHANNEL MOSFET DESCRIPTION SVGP20500NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. S1 S2 S3 G4 8D 7D 6D 5D FEATURES  24A, 200V, RDS(on)(typ.)=42m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 200 2.0~4.