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SVGP02R58NL5 - 25V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGP02R58NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 294A, 25V, RDS(on)(typ. )=0.48m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY.

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Datasheet preview – SVGP02R58NL5

Datasheet Details

Part number SVGP02R58NL5
Manufacturer Silan Microelectronics
File Size 373.30 KB
Description 25V N-CHANNEL MOSFET
Datasheet download datasheet SVGP02R58NL5 Datasheet
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Silan Microelectronics SVGP02R58NL5_Datasheet 294A, 25V N-CHANNEL MOSFET DESCRIPTION SVGP02R58NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  294A, 25V, RDS(on)(typ.)=0.48m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 65 87 4 23 1 1 32 4 PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 25 1.0~2.
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