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SVGP101R5NL - 100V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGP101R5NL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 320A, 100V, RDS(on)(typ. )=1.1m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 8 Tab 1 1 8 TOLL-8L KEY.

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Datasheet preview – SVGP101R5NL

Datasheet Details

Part number SVGP101R5NL
Manufacturer Silan Microelectronics
File Size 437.16 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVGP101R5NL Datasheet
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Silan Microelectronics SVGP101R5NL_Datasheet 320A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP101R5NL is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. Tab pin1 Pin2-8 Pin1.Gate Tab2.Drain pin2-8.Source Tab FEATURES  320A, 100V, RDS(on)(typ.)=1.1m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 8 Tab 1 1 8 TOLL-8L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max ID Qg.typ Ratings 100 2.2~3.8 1.
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