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SVGP104R1NL5 - 100V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGP104R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 136A, 100V, RDS(on)(typ. )=3.4m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant PDFN-8-5X6X0.95-1.27 KEY.

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Datasheet preview – SVGP104R1NL5

Datasheet Details

Part number SVGP104R1NL5
Manufacturer Silan Microelectronics
File Size 502.86 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVGP104R1NL5 Datasheet
Additional preview pages of the SVGP104R1NL5 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVGP104R1NL5_Datasheet 136A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. S1 S2 S3 G4 8D 7D 6D 5D FEATURES  136A, 100V, RDS(on)(typ.)=3.4m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant PDFN-8-5X6X0.95-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 100 2.3~3.9 4.
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