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SVGP104R5NAT - 100V N-CHANNEL MOSFET

This page provides the datasheet information for the SVGP104R5NAT, a member of the SVGP104R5NAT-SilanMicroelectronics 100V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVGP104R5NAT(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 120A, 100V, RDS(on)(typ. )=3.6m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 1 3 TO-263-2L KEY.

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Datasheet preview – SVGP104R5NAT

Datasheet Details

Part number SVGP104R5NAT
Manufacturer Silan Microelectronics
File Size 301.57 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVGP104R5NAT Datasheet
Additional preview pages of the SVGP104R5NAT datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVGP104R5NAT(S)_Datasheet 120A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP104R5NAT(S) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  120A, 100V, RDS(on)(typ.)=3.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 12 3 TO-220-3L 1 3 TO-263-2L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 100 2.0~4.0 4.
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