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SVGP103R0NP7 - 100V N-CHANNEL MOSFET

This page provides the datasheet information for the SVGP103R0NP7, a member of the SVGP103R0NT 100V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVGP103R0NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 180A, 100V, RDS(on)(typ. )=2.5m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 123 TO-220-3L TO-247-3L.

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Datasheet preview – SVGP103R0NP7

Datasheet Details

Part number SVGP103R0NP7
Manufacturer Silan Microelectronics
File Size 400.24 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVGP103R0NP7 Datasheet
Additional preview pages of the SVGP103R0NP7 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVGP103R0NT(P7)_Datasheet 180A, 100V N-CHANNEL MOSFET DESCRIPTION SVGP103R0NT(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. 2 1 3 1.Gate 2.Drain 3.Source FEATURES  180A, 100V, RDS(on)(typ.)=2.5m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 123 TO-220-3L TO-247-3L FEATURES Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 100 2.2~3.8 3.
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