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SVGP082R6NL5A - 80V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGP082R6NL5A is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 100A, 80V, RDS(on)(typ. )=2.2m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 5 678 8 7 65 1 234 4 3 21 DFN-8-5×6×0.9-1.27 KEY.

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Datasheet preview – SVGP082R6NL5A

Datasheet Details

Part number SVGP082R6NL5A
Manufacturer Silan Microelectronics
File Size 351.10 KB
Description 80V N-CHANNEL MOSFET
Datasheet download datasheet SVGP082R6NL5A Datasheet
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Silan Microelectronics SVGP082R6NL5A_Datasheet 100A, 80V N-CHANNEL MOSFET DESCRIPTION SVGP082R6NL5A is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  100A, 80V, RDS(on)(typ.)=2.2m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant S1 S2 S3 G4 8D 7D 6D 5D 5 678 8 7 65 1 234 4 3 21 DFN-8-5×6×0.9-1.27 KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ. Ratings 80 2.2~3.8 2.
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