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SVGP069R5NSA - 60V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGP069R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 14A, 60V, RDS(on)(typ. )=8m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability 4. Gate 1、2、3. Source 5、6；7、8. Drain 4 5678 12 3 SOP-8-225-1.27.

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Datasheet preview – SVGP069R5NSA

Datasheet Details

Part number SVGP069R5NSA
Manufacturer Silan Microelectronics
File Size 278.34 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet SVGP069R5NSA Datasheet
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Silan Microelectronics SVGP069R5NSA_Datasheet 14A, 60V N-CHANNEL MOSFET DESCRIPTION SVGP069R5NSA is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in Secondary synchronous rectifier, Power Management for Inverter Systems. FEATURES  14A, 60V, RDS(on)(typ.)=8m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 4. Gate 1、2、3. Source 5、6；7、8. Drain 4 5678 12 3 SOP-8-225-1.27 NOMENCLATURE SVGPXXXRXNX Silan Low voltage SGT MOS products Process Version, P denotes PASSIVATION Package information. Example: SA:SOP-8-225-1.
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