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SVGP03100NCS - 28V N-CHANNEL MOSFET

Datasheet Summary

Description

SVGP03100NCS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 10A, 28V, RDS(on)(typ. )=12m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching Sub Drain1 WLCSP-22-2.0x2.0x0.55-0.4 Pin A1 Drain2 Gate Top view 5 4 32 1 D1 D1 D1 D1 D1 A D2 D2 D2 D2 D2 B G Sub C D1 D1 D1 D1 D1 D D2 D2 D2 D2 D2 E Bottom view.

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Datasheet Details

Part number SVGP03100NCS
Manufacturer Silan Microelectronics
File Size 325.29 KB
Description 28V N-CHANNEL MOSFET
Datasheet download datasheet SVGP03100NCS Datasheet
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Silan Microelectronics SVGP03100NCS_Datasheet 10A, 28V N-CHANNEL MOSFET DESCRIPTION SVGP03100NCS is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management. FEATURES  10A, 28V, RDS(on)(typ.)=12m@VGS=10V  Low gate charge  Low Crss  Fast switching Sub Drain1 WLCSP-22-2.0x2.0x0.55-0.4 Pin A1 Drain2 Gate Top view 5 4 32 1 D1 D1 D1 D1 D1 A D2 D2 D2 D2 D2 B G Sub C D1 D1 D1 D1 D1 D D2 D2 D2 D2 D2 E Bottom view ORDERING INFORMATION Part No. SVGP03100NCSTR Package WLCSP-22-2.0x2.0x0.55-0.
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