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SVGP066R1NL5 - 60V N-CHANNEL MOSFET

This page provides the datasheet information for the SVGP066R1NL5, a member of the SVGP066R1NL5-SilanMicroelectronics 60V N-CHANNEL MOSFET family.

Datasheet Summary

Description

SVGP066R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 71A, 60V, RDS(on)(typ. )=5.1m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 5 6 7 8 1 2 3 4 4 3 2 1 PDFN-8-5X6X0.95-1.27.

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Datasheet preview – SVGP066R1NL5

Datasheet Details

Part number SVGP066R1NL5
Manufacturer Silan Microelectronics
File Size 280.25 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet SVGP066R1NL5 Datasheet
Additional preview pages of the SVGP066R1NL5 datasheet.

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Full PDF Text Transcription

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Silan Microelectronics SVGP066R1NL5_Datasheet 71A, 60V N-CHANNEL MOSFET DESCRIPTION SVGP066R1NL5 is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  71A, 60V, RDS(on)(typ.)=5.1m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated S1 S2 S3 G4 8D 7D 6D 5D 8 7 6 5 5 6 7 8 1 2 3 4 4 3 2 1 PDFN-8-5X6X0.95-1.27 ORDERING INFORMATION Part No. SVGP066R1NL5TR Package PDFN-8-5X6X0.95-1.
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