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SVGP20110NT - 200V N-CHANNEL MOSFET

General Description

SVGP20110NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Key Features

  • 88A, 200V, RDS(on)(typ. )=9.6m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Extreme dv/dt rated.
  • 100% avalanche tested.
  • Pb-free lead plating.
  • RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220-3L 1 3 TO-263-2L TO-247-3L KEY.

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Datasheet Details

Part number SVGP20110NT
Manufacturer Silan Microelectronics
File Size 446.36 KB
Description 200V N-CHANNEL MOSFET
Datasheet download datasheet SVGP20110NT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVGP20110NT(S)(P7)_Datasheet 88A, 200V N-CHANNEL MOSFET DESCRIPTION SVGP20110NT(S)(P7) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in power management for UPS and Inverter Systems. FEATURES  88A, 200V, RDS(on)(typ.)=9.6m@VGS=10V  Low gate charge  Low Crss  Fast switching  Extreme dv/dt rated  100% avalanche tested  Pb-free lead plating  RoHS compliant 2 1 3 1.Gate 2.Drain 3.Source 123 TO-220-3L 1 3 TO-263-2L TO-247-3L KEY PERFORMANCE PARAMETERS Characteristics VDS VGS(th) RDS(on),max. ID Qg.typ.