2SJ649 Datasheet PDF - NEC MOS FIELD EFFECT TRANSISTOR Specs

2SJ649 - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

Features

Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS =.
10 V, ID =.
10 A) RDS(on)2 = 75 mΩ MAX. (VGS =.
4.0 V, ID =.
10 A).
Low input capacitance: Ciss = 1900 pF TYP. (VDS =.
10 V, VGS = 0 V).
Built-in gate protection diode (Isolated TO-220).

Datasheet Details

Part number	2SJ649
Manufacturer	NEC
File Size	104.53 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ649 Datasheet
Additional preview pages of the 2SJ649 datasheet.

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www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ649 SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The 2SJ649 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. ORDERING INFORMATION PART NUMBER 2SJ649 PACKAGE Isolated TO-220 FEATURES • Low on-state resistance: RDS(on)1 = 48 mΩ MAX. (VGS = –10 V, ID = –10 A) RDS(on)2 = 75 mΩ MAX. (VGS = –4.0 V, ID = –10 A) • Low input capacitance: Ciss = 1900 pF TYP. (VDS = –10 V, VGS = 0 V) • Built-in gate protection diode (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg –60 V V A A W W °C °C A mJ m 20 m 20 m 70 25 2.

Published: Jan 25, 2007 |