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2SJ649 - P-Channel MOSFET

Datasheet Summary

Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2002/95/EC S G GDS Top View D P-Channel MOSFET.

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Datasheet Details

Part number 2SJ649
Manufacturer VBsemi
File Size 172.52 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ649 Datasheet
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Full PDF Text Transcription

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2SJ649-VB 2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.050 at VGS = - 10 V - 60 0.060 at VGS = - 4.5 V ID (A) - 30 - 24 Qg (Typ.) 67 TO-220 FULLPAK FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.
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