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SMD Type
MOS Field Effect Transistor 2SJ600
Features
Low on-resistance RDS(on)1 = 50 m RDS(on)2 = 79m MAX. (VGS =-10 V, ID = -13 A) MAX. (VGS = -4.0 V, ID =-13 A)
+0.15 5.55-0.15
+0.15 6.50-0.15 +0.2 5.30-0.2
IC MOSFET
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
+0.2 9.70-0.2
+0.1 0.80-0.1
+0.15 0.50-0.15
Built-in gate protection diode
0.127 max
+0.28 1.50-0.1
+0.25 2.65-0.1
1 Gate 2 Drain 3 Source
2.3
+0.15 4.60-0.15
+0.1 0.60-0.1
Absolute Maximum Ratings Ta = 25
Parameter Drain to source voltage Gate to source voltage Drain current (DC) Drain current(pulse) * Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s, duty cycle 1% Symbol VDSS VGSS ID ID PD PD Tch Tstg Rating -60 20 25 70 45 1.0 150 -55 to +150 Unit V V A A W W
3.
2SJ600 Datasheet
