Datasheet4U Logo Datasheet4U.com

2SJ608 - Ultrahigh Speed Switching Applications

Datasheet Summary

Features

  • Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1.2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 0.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS I.

📥 Download Datasheet

Datasheet preview – 2SJ608

Datasheet Details

Part number 2SJ608
Manufacturer Sanyo Semicon Device
File Size 78.06 KB
Description Ultrahigh Speed Switching Applications
Datasheet download datasheet 2SJ608 Datasheet
Additional preview pages of the 2SJ608 datasheet.

📁 Similar Datasheet

  • 2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
  • 2SJ600 - MOSFET (Kexin)
  • 2SJ601 - P-Channel Power MOSFET (NEC)
  • 2SJ601 - MOSFET (Kexin)
  • 2SJ602 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ602 - MOSFET (Kexin)
  • 2SJ603 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ604 - P-Channel Power MOSFET (NEC)
  • 2SJ604 - MOSFET (Kexin)
  • 2SJ605 - MOS FIELD EFFECT TRANSISTOR (NEC)
Other Datasheets by Sanyo Semicon Device
  • 2SJ609 - DC / DC Converter Applications
  • 2SJ612 - Ultrahigh-Speed Switching Applications
  • 2SJ629 - P-Channel MOSFET
  • 2SJ630 - General-Purpose Switching Device Applications
  • 2SJ632 - P CHANNEL MOS SILICON TRANSISTOR
  • 2SJ633 - DC/DC Converter Applications
  • 2SJ634 - DC/ DC CONVERTER TRANSISTOR
  • 2SJ635 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com w ww.DataSheet4U.com Ordering number : ENN6995 2SJ608 P-Channel Silicon MOSFET 2SJ608 Ultrahigh Speed Switching Applications Features • • • • • Package Dimensions unit : mm 2085A [2SJ608] 10.5 1.9 4.5 1.2 Low ON-resistance. Ultrahigh speed switching. Low-voltage drive. Mounting height 9.5mm. Meets radial taping. 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 0.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Source 2 : Drain 3 : Gate 2.5 2.5 SANYO : FLP Ratings -30 ± 20 --4 -16 1.4 150 --55 to +150 Unit V V A A W °C °C Conditions www.
Published: |