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2SJ630 - General-Purpose Switching Device Applications

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Features

  • General-Purpose Switching Device.

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Datasheet Details

Part number 2SJ630
Manufacturer Sanyo Semicon Device
File Size 64.28 KB
Description General-Purpose Switching Device Applications
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www.DataSheet4U.com Ordering number : ENA0489 2SJ630 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings --12 ±8 --6 --24 1.5 3.
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