Datasheet4U Logo Datasheet4U.com

2SJ632 - P CHANNEL MOS SILICON TRANSISTOR

Datasheet Summary

Features

  • Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C www. DataSheet4U. com Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbo.

📥 Download Datasheet

Datasheet preview – 2SJ632

Datasheet Details

Part number 2SJ632
Manufacturer Sanyo Semicon Device
File Size 64.14 KB
Description P CHANNEL MOS SILICON TRANSISTOR
Datasheet download datasheet 2SJ632 Datasheet
Additional preview pages of the 2SJ632 datasheet.

📁 Similar Datasheet

  • 2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
  • 2SJ600 - MOSFET (Kexin)
  • 2SJ601 - P-Channel Power MOSFET (NEC)
  • 2SJ601 - MOSFET (Kexin)
  • 2SJ602 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ602 - MOSFET (Kexin)
  • 2SJ603 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ604 - P-Channel Power MOSFET (NEC)
  • 2SJ604 - MOSFET (Kexin)
  • 2SJ605 - MOS FIELD EFFECT TRANSISTOR (NEC)
Other Datasheets by Sanyo Semicon Device
  • 2SJ630 - General-Purpose Switching Device Applications
  • 2SJ633 - DC/DC Converter Applications
  • 2SJ634 - DC/ DC CONVERTER TRANSISTOR
  • 2SJ635 - P-Channel Silicon MOSFET General-Purpose Switching Device Applications
  • 2SJ636 - 2SJ636
  • 2SJ637 - DC/DC FOR CONVERTER
  • 2SJ608 - Ultrahigh Speed Switching Applications
  • 2SJ609 - DC / DC Converter Applications

Full PDF Text Transcription

Click to expand full text
Ordering number : ENN7420 2SJ632 P-Channel Silicon MOSFET 2SJ632 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ632] 4.5 1.6 1.5 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 (Bottom view) 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Specifications Absolute Maximum Ratings at Ta=25°C www.DataSheet4U.com Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions Ratings -60 ±20 --2 Unit V V A A W W °C °C PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C --8 1.5 3.
Published: |