2SJ605 Datasheet PDF - NEC MOS FIELD EFFECT TRANSISTOR Specs

2SJ605 - MOS FIELD EFFECT TRANSISTOR

Datasheet Summary

Description

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =.
10 V, ID =.
33 A) RDS(on)2 = 31 mΩ MAX. (VGS =.
4.0 V, ID =.
33 A).
Low input capacitance ! Ciss = 4600 pF TYP. (VDS =.
10 V, VGS = 0 A).
Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB).

Datasheet Details

Part number	2SJ605
Manufacturer	NEC
File Size	120.10 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	2SJ605 Datasheet
Additional preview pages of the 2SJ605 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ605 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = –10 V, ID = –33 A) RDS(on)2 = 31 mΩ MAX. (VGS = –4.0 V, ID = –33 A) • Low input capacitance ! Ciss = 4600 pF TYP. (VDS = –10 V, VGS = 0 A) • Built-in gate protection diode Note TO-220SMD package is produced only in Japan. (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) www.DataSheet4U.

Published: Jul 12, 2007 |