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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ604
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION The 2SJ604 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.
FEATURES • Super low on-state resistance:
RDS(on)1 = 30 mΩ MAX. (VGS = −10 V, ID = −23 A) RDS(on)2 = 43 mΩ MAX. (VGS = −4.0 V, ID = −23 A) • Low input capacitance: Ciss = 3300 pF TYP. (VDS = −10 V, VGS = 0 V) • Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
−60
Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C)
VGSS ID(DC) ID(pulse)
PT
m 20 m 45 m 120 70
Total Power Dissipation (TA = 25°C)
PT
1.
2SJ604 Datasheet
