Click to expand full text
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ648
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The 2SJ648 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ648 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
1.6 ± 0.1 0.8 ± 0.1
PACKAGE DRAWING (Unit: mm)
0.3 +0.1 –0 0.15 +0.1 –0.05
3 0 to 0.1 2 0.2 0.5
+0.1 –0
FEATURES
• 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A)
1
0.5
0.6 0.75 ± 0.05
1.0 1.6 ± 0.1
ORDERING INFORMATION
PART NUMBER
www.DataSheet4U.
2SJ648 Datasheet
