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2SJ646 - P-Channel Silicon MOSFET

Datasheet Summary

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Drain-to-Source Breakdown Voltage Zero-Gate.

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Datasheet Details

Part number 2SJ646
Manufacturer ON Semiconductor
File Size 96.45 KB
Description P-Channel Silicon MOSFET
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Full PDF Text Transcription

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2SJ646 Ordering number : ENN8282 2SJ646 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive.
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