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Ordering number : EN8586A
2SJ661
P-Channel Power MOSFET
–60V, –38A, 39mΩ, TO-262-3L/TO-263-2L
http://onsemi.com
Features
• ON-resistance RDS(on)1=29.5mΩ(typ.) • 4V drive
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
VDSS VGSS ID IDP
Allowable Power Dissipation
PD
Package Dimensions unit : mm (typ) 7537-001
• Input capacitance Ciss=4360pF (typ.)
Conditions
PW≤10μs, duty cycle≤1% Tc=25°C
Ratings
--60 ±20 --38 --152 1.65
65
Unit V V A A W W
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Package Dimensions unit : mm (typ) 7535-001
2SJ661-1E
2SJ661-DL-1E
10.0 4.5
8.0
1.3
10.0 4.5
8.0
1.3 4
0.9 1.75
1.4 9.2 1.2
13.4
0.9 1.75 3.0
9.2 1.2
1.35 7.9
7.9
5.3
3.0
1.47 1.27
0.8 0.