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Ordering number : ENN8248
2SJ667
P-Channel Silicon MOSFET
2SJ667
Features
• • • • •
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse)
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Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV
Conditions
Ratings --100 ±20 --42
Unit V V A A W W °C °C mJ A
PW≤10µs, duty cycle≤1% Tc=25°C
--168 2.