Datasheet4U Logo Datasheet4U.com

2SJ665 - P-Channl Silicon MOSFET

Datasheet Summary

Features

  • ON-resistance RDS(on)1=59mΩ(typ. ).
  • 4V drive.
  • Input capacitance Ciss=4200pF (typ. ) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
  • 1 EAS Avalanche Current.
  • 2 IAV Note :.
  • 1 VDD=--30V, L=100μH, IAV=--27A (Fig.1).

📥 Download Datasheet

Datasheet preview – 2SJ665

Datasheet Details

Part number 2SJ665
Manufacturer ON Semiconductor
File Size 223.10 KB
Description P-Channl Silicon MOSFET
Datasheet download datasheet 2SJ665 Datasheet
Additional preview pages of the 2SJ665 datasheet.

📁 Similar Datasheet

  • 2SJ664 - P-Channel MOSFET (Sanyo Semicon Device)
  • 2SJ667 - P-Channel MOSFET (Sanyo Semicon Device)
  • 2SJ668 - Silicon P-Channel MOSFET (Toshiba)
  • 2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
  • 2SJ600 - MOSFET (Kexin)
  • 2SJ601 - P-Channel Power MOSFET (NEC)
  • 2SJ601 - MOSFET (Kexin)
  • 2SJ602 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ602 - MOSFET (Kexin)
  • 2SJ603 - MOS FIELD EFFECT TRANSISTOR (NEC)
Other Datasheets by ON Semiconductor
  • 2SJ661 - P-Channel Power MOSFET
  • 2SJ646 - P-Channel Silicon MOSFET
  • 2SJ650 - P-Channl Silicon MOSFET

Full PDF Text Transcription

Click to expand full text
Ordering number : EN8590A 2SJ665 P-Channel Power MOSFET –100V, –27A, 77mΩ, TO-263-2L http://onsemi.com Features • ON-resistance RDS(on)1=59mΩ(typ.) • 4V drive • Input capacitance Ciss=4200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--27A (Fig.1) *2 L≤100μH, single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C Ratings --100 ±20 --27 --108 65 150 --55 to +150 48 --27 Unit V V A A W °C °C mJ A Stresses exceeding Maximum Ratings may damage the device.
Published: |