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2SJ650 - P-Channl Silicon MOSFET

Datasheet Summary

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ650] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation Channel Temperatu.

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Datasheet Details

Part number 2SJ650
Manufacturer ON Semiconductor
File Size 93.24 KB
Description P-Channl Silicon MOSFET
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Full PDF Text Transcription

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2SJ650 Ordering number : ENN7500 2SJ650 P-Channl Silicon MOSFET DC / DC Converter Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. Package Dimensions unit : mm 2063A 10.0 3.2 [2SJ650] 4.5 2.8 3.5 7.2 16.0 18.1 5.6 Specifications Absolute Maximum Ratings at Ta=25°C 1.6 1.2 0.75 123 2.55 2.55 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation Channel Temperature Storage Temperature PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Tc=25°C Ratings --60 ±20 --12 --48 2.
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