Datasheet4U Logo Datasheet4U.com

2SJ658 - P-Channel MOSFET

Datasheet Summary

Features

  • Package Dimensions unit : mm 2178 [2SJ658] 5.0 4.0 4.0 Low ON-resistance. High-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤1.

📥 Download Datasheet

Datasheet preview – 2SJ658

Datasheet Details

Part number 2SJ658
Manufacturer Sanyo Semicon Device
File Size 54.26 KB
Description P-Channel MOSFET
Datasheet download datasheet 2SJ658 Datasheet
Additional preview pages of the 2SJ658 datasheet.

📁 Similar Datasheet

  • 2SJ650 - P-Channl Silicon MOSFET (ON Semiconductor)
  • 2SJ654 - P-Channl Silicon MOSFET (Sanyo)
  • 2SJ659 - P-Channel Silicon MOSFET (Sanyo)
  • 2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)
  • 2SJ600 - MOSFET (Kexin)
  • 2SJ601 - P-Channel Power MOSFET (NEC)
  • 2SJ601 - MOSFET (Kexin)
  • 2SJ602 - MOS FIELD EFFECT TRANSISTOR (NEC)
  • 2SJ602 - MOSFET (Kexin)
  • 2SJ603 - MOS FIELD EFFECT TRANSISTOR (NEC)
Other Datasheets by Sanyo Semicon Device
  • 2SJ650 - P-Channl Silicon MOSFET
  • 2SJ651 - P CHANNEL SILICON TRASISTOR
  • 2SJ652 - General-Purpose Switching Device Applications
  • 2SJ653 - General-Purpose Switching Device Applications
  • 2SJ655 - P-Channel Silicon MOSFET
  • 2SJ656 - General-Purpose Switching Device
  • 2SJ657 - General-Purpose Switching Device
  • 2SJ608 - Ultrahigh Speed Switching Applications

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Ordering number : ENN7552 2SJ658 P-Channel Silicon MOSFET 2SJ658 High-Speed Switching Applications Features • • • Package Dimensions unit : mm 2178 [2SJ658] 5.0 4.0 4.0 Low ON-resistance. High-speed switching. 2.5V drive. 0.45 0.5 0.6 2.0 5.0 0.45 0.44 1 2 3 14.0 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -20 ±10 --2 --8 0.
Published: |