2SJ659 - P-Channel Silicon MOSFET

Datasheet Summary

Features

General-Purpose Switching Device.

Sanyo

📥 Download Datasheet

Datasheet Details

Part number	2SJ659
Manufacturer	Sanyo
File Size	57.45 KB
Description	P-Channel Silicon MOSFET
Datasheet	2SJ659 Datasheet
Additional preview pages of the 2SJ659 datasheet.

📁 Similar Datasheet

2SJ650 - P-Channl Silicon MOSFET (Sanyo Semicon Device)
2SJ650 - P-Channl Silicon MOSFET (ON Semiconductor)
2SJ651 - P CHANNEL SILICON TRASISTOR (Sanyo Semicon Device)
2SJ652 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
2SJ653 - General-Purpose Switching Device Applications (Sanyo Semicon Device)
2SJ655 - P-Channel Silicon MOSFET (Sanyo Semicon Device)
2SJ656 - General-Purpose Switching Device (Sanyo Semicon Device)
2SJ657 - General-Purpose Switching Device (Sanyo Semicon Device)
2SJ658 - P-Channel MOSFET (Sanyo Semicon Device)
2SJ600 - SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE (NEC)

Other Datasheets by Sanyo

2SJ654 - P-Channl Silicon MOSFET
2SJ613 - Ultrahigh Speed Switching Applications
2SJ615 - P-Channel Silicon MOSFET
2SJ670 - P-Channel Silicon MOSFET
2SJ348 - P-Channl Silicon MOSFET

Full PDF Text Transcription

Click to expand full text

Ordering number : EN8584 2SJ659 P-Channel Silicon MOSFET 2SJ659 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --60 ±20 --14 --56 1.

Published: Feb 17, 2014 |