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2SJ651 - P CHANNEL SILICON TRASISTOR

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Features

  • Package Dimensions unit : mm 2063A [2SJ651] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1.

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Datasheet Details

Part number 2SJ651
Manufacturer Sanyo Semicon Device
File Size 59.71 KB
Description P CHANNEL SILICON TRASISTOR
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www.DataSheet4U.com Ordering number : ENN7501 2SJ651 P-Channl Silicon MOSFET 2SJ651 DC / DC Converter Applications Features • • • Package Dimensions unit : mm 2063A [2SJ651] 10.0 3.2 3.5 7.2 Low ON-resistance. Ultrahigh-speed switching. 4V drive. 4.5 2.8 18.1 16.0 5.6 14.0 1.6 1.2 0.75 1 2 3 2.55 2.4 2.4 0.7 2.55 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings --60 ±20 --20 --80 2.0 25 150 --55 to +150 Unit V V A A W W °C °C 2.55 2.
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