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Ordering number : ENN7712
2SJ655
2SJ655
Features
• • • •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. 4V drive. Ultrahigh-speed switching. Motor drive, DC / DC converter.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions Ratings --100 ±20 --12 --48 2.