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NCE60H10 - NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.7mΩ) Special process technology for high ESD capability

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Datasheet Details

Part number NCE60H10
Manufacturer NCE Power
File Size 377.47 KB
Description NCE N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60H10 Datasheet
Additional preview pages of the NCE60H10 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE60H10 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature ● VDS =60V,ID =100A RDS(ON) < 6.5mΩ @ VGS=10V (Typ:5.
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