NCE60H12 Datasheet PDF (N-Channel Enhancement Mode Power MOSFET) | Download NCE Power Semiconductor NCE60H12

NCE60H12 - N-Channel Enhancement Mode Power MOSFET

Description

The NCE60H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V (Typ6.5mΩ) Schematic diagram.
Special process technology for high ESD capability.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.

Datasheet Details

Part number	NCE60H12
Manufacturer	NCE Power Semiconductor
File Size	378.03 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE60H12 Datasheet
Additional preview pages of the NCE60H12 datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE60H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =115A RDS(ON) < 7.0mΩ @ VGS=10V (Typ6.

Published: Feb 7, 2016 |