• Part: NCE6003X
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 708.17 KB
Download NCE6003X Datasheet PDF
NCE Power Semiconductor
NCE6003X
Description The NCE6003X uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features Schematic Diagram - VDS =60V,ID =3A RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.5V - High power and current handing capability - Lead free product is acquired Only - Surface mount package Application Use Marking and Pin Assignment - Battery switch - DC/DC converter times SOT-23 Top View Package Marking and Ordering Information ng Device Marking e 6003X Device NCE6003X Device Package SOT-23 Reel Size Ø180mm Tape width 8 mm gsh Absolute Maximum Ratings (TA=25℃unless otherwise noted) Ton Parameter Symbol Limit Quantity 3000 units Unit Drain-Source Voltage r Gate-Source Voltage Fo Drain Current-Continuous Drain Current-Pulsed (Note 1) VDS VGS ID IDM ±20 Single pulse avalanche Current (Note 5) Single pulse avalanche...