• Part: NCE6003XY
  • Description: N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 779.42 KB
Download NCE6003XY Datasheet PDF
NCE Power Semiconductor
NCE6003XY
Description The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application. General Features Schematic Diagram - VDS =60V,ID =3A RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.5V - High power and current handing capability - Lead free product is acquired - Surface mount package Application - Battery switch - DC/DC converter Only Use Marking and Pin Assignment times SOT-23-3L Top View g Package Marking and Ordering Information n Device Marking Device Device Package e 6003XY SOT-23-3L Reel Size Ø180mm Tape width 8 mm gsh Absolute Maximum Ratings (TA=25℃unless otherwise noted) n Parameter Symbol To Drain-Source Voltage Limit Quantity 3000 units Unit Gate-Source Voltage r Drain Current-Continuous Fo Drain Current-Pulsed (Note 1) Maximum Power Dissipation ±20 Operating Junction and...